Curso Superior de Tecnologia em Eletrônica Industrial
URI permanente desta comunidadehttps://ri.ifam.edu.br/handle/4321/957
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Item Caracterização elétrica do diodo de sinal 1N4148(2023-02-23) Leão, Nervan dos Santos; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Souza, José Geraldo de Pontes; http://lattes.cnpq.br/3583358046117558; Ribeiro, Ewerton Andrey Godinho; http://lattes.cnpq.br/0187470129136467The objective of this work is the electrical characterization of the 1N4148 signal diode. For the present work, bibliographic research was used on the functioning of the component, a conventional workbench was set up in the laboratory of Industry II of the IFAM-CMDI, the voltage and current data of the component will be collected in the circuit mounted on a protoboard, in the Excel program it will be After plotting the XY dispersion graph of the characteristic curve of the voltage versus current of the 1N4148 signal diode, the Multisim program will simulate the circuit and the characteristic curve of the component to be compared with the data collected on the conventional bench and from the Datasheet of the 1N4148 signal diode . The results of the electrical measurements obtained in the practical experiment in the laboratory were quite satisfactory, as observed in the graphs of the characteristic curve of the component, the values are close to the Datasheet supplied by the manufacturer and the values obtained in simulations in the Multisim program. With the development of the work we also managed to improve the knowledge about the operation, electrical characteristics and applications of diodes. The work can be used by technical and higher level students, facilitating their learning in surveying the characteristic curves of the signal diode, through the conventional workbench and the Multisim and Excel programs.Item Caracterização elétrica do diodo zener(2023-02-23) Nascimento, José Paulo Araújo Rocha; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Souza, José Geraldo de Pontes; http://lattes.cnpq.br/3583358046117558; Ribeiro, Ewerton Andrey Godinho; http://lattes.cnpq.br/0187470129136467This electrical characterization project, for electronic components, with direct and reverse polarization, zener diode multisim has the purpose of characterizing electronic components such as the zener diode, through forward and reverse polarization, which will have the purpose to enable students in their academics training to develop complex circuits with and without load on the electronic board, using the parameters, of curves analyzed in a voltage source and digital multimeter, where the component data will be inserted through a program of electronic data, in this case, the graphical environment simulator, the Multisim, which will be prepared for this logical integration task.Item Caracterização elétrica do transistor mosfet(2023-02-23) Silva , Mário Jorge Aragão da; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Souza, José Geraldo de Pontes; http://lattes.cnpq.br/3583358046117558; Ribeiro, Ewerton Andrey Godinho; http://lattes.cnpq.br/0187470129136467Knowledge of transistors is of paramount importance for the student of electronics. The objective of this work is to make the electrical characterization of the Mosfet transistor. This is bibliographical research and the use of measuring instruments from the IFAM-CMDI laboratories, information on their operation will be collected such as voltage, current and characteristic curve, for which a simple circuit will be mounted on a protoboard. After collecting the voltage and current measurements of the Mosfet transistor, these data will be inserted into the MultiSim simulator. The results of the electrical measurements on the breadboard and the MultiSim simulator will be compared with the Mosfet 2N7000 transistor datasheet. It was possible to conclude that the results obtained from electrical measurements of voltage, current and characteristic curve of the 2N7000 transistor are close to the values in the datasheet of said transistor.