Curso Superior de Tecnologia em Eletrônica Industrial
URI permanente desta comunidadehttps://ri.ifam.edu.br/handle/4321/957
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Item Caracterização elétrica do diodo zener(2023-02-23) Nascimento, José Paulo Araújo Rocha; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Souza, José Geraldo de Pontes; http://lattes.cnpq.br/3583358046117558; Ribeiro, Ewerton Andrey Godinho; http://lattes.cnpq.br/0187470129136467This electrical characterization project, for electronic components, with direct and reverse polarization, zener diode multisim has the purpose of characterizing electronic components such as the zener diode, through forward and reverse polarization, which will have the purpose to enable students in their academics training to develop complex circuits with and without load on the electronic board, using the parameters, of curves analyzed in a voltage source and digital multimeter, where the component data will be inserted through a program of electronic data, in this case, the graphical environment simulator, the Multisim, which will be prepared for this logical integration task.Item Caracterização elétrica do transistor mosfet(2023-02-23) Silva , Mário Jorge Aragão da; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Souza, José Geraldo de Pontes; http://lattes.cnpq.br/3583358046117558; Ribeiro, Ewerton Andrey Godinho; http://lattes.cnpq.br/0187470129136467Knowledge of transistors is of paramount importance for the student of electronics. The objective of this work is to make the electrical characterization of the Mosfet transistor. This is bibliographical research and the use of measuring instruments from the IFAM-CMDI laboratories, information on their operation will be collected such as voltage, current and characteristic curve, for which a simple circuit will be mounted on a protoboard. After collecting the voltage and current measurements of the Mosfet transistor, these data will be inserted into the MultiSim simulator. The results of the electrical measurements on the breadboard and the MultiSim simulator will be compared with the Mosfet 2N7000 transistor datasheet. It was possible to conclude that the results obtained from electrical measurements of voltage, current and characteristic curve of the 2N7000 transistor are close to the values in the datasheet of said transistor.