(2023-02-23) Silva , Mário Jorge Aragão da; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Cordeiro, Celso Souza; http://lattes.cnpq.br/4969144304480235; Souza, José Geraldo de Pontes; http://lattes.cnpq.br/3583358046117558; Ribeiro, Ewerton Andrey Godinho; http://lattes.cnpq.br/0187470129136467
Knowledge of transistors is of paramount importance for the student of electronics. The objective of this work is to make the electrical characterization of the Mosfet transistor. This is bibliographical research and the use of measuring instruments from the IFAM-CMDI laboratories, information on their operation will be collected such as voltage, current and characteristic curve, for which a simple circuit will be mounted on a protoboard. After collecting the voltage and current measurements of the Mosfet transistor, these data will be inserted into the MultiSim simulator. The results of the electrical measurements on the breadboard and the MultiSim simulator will be compared with the Mosfet 2N7000 transistor datasheet. It was possible to conclude that the results obtained from electrical measurements of voltage, current and characteristic curve of the 2N7000 transistor are close to the values in the datasheet of said transistor.
